Datenblatt-Suchmaschine für elektronische Bauteile |
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AM1214-175 Datenblatt(PDF) 1 Page - STMicroelectronics |
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AM1214-175 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 6 page September 1992 L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR CAPABILITY . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 160 W MIN. WITH 7.3 dB GAIN DESCRIPTION The AM1214-175 device is a high power Class C transistor specifically designed for L-Band radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and tempera- tures and is capable of withstanding 3:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bond- ing techniques ensure high reliability and product consistency. The AM1214-175 is supplied in the BIGPAC ™ Her- metic M etal/Ceramic package with i nternal Input/Output matching structures. PIN CONNECTION BRANDING 1214-175 ORDER CODE AM1214-175 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 100°C) 330 W IC Device Current* 14 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.45 °C/W *Applies only to rated RF amplifier operation AM1214-175 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA 1/6 |
Ähnliche Teilenummer - AM1214-175 |
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Ähnliche Beschreibung - AM1214-175 |
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