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BTA41-400 Datenblatt(Datasheet) 2 Page - STMicroelectronics

Teile-Nr. BTA41-400
Beschreibung  STANDARD TRIACS
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
50
°C/W
Rth (j-c) DC Junction to case for DC
BTA
1.2
°C/W
BTB
0.8
Rth (j-c) AC Junction to case for 360
° conduction angle
( F= 50 Hz)
BTA
0.9
°C/W
BTB
0.6
Symbol
Test Conditions
Quadrant
Suffix
Unit
AB
IGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III
MAX
100
50
mA
IV
MAX
150
100
VGT
VD=12V
(DC)
RL=33Ω
Tj=25
°C
I-II-III-IV
MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj=125
°C
I-II-III-IV
MIN
0.2
V
tgt
VD=VDRM IG = 500mA
dIG/dt = 3A/µs
Tj=25
°C
I-II-III-IV
TYP
2.5
µs
IL
IG=1.2 IGT
Tj=25
°C
I-III-IV
TYP
70
60
mA
II
200
180
IH *IT= 500mA gate open
Tj=25
°C
MAX
100
80
mA
VTM *ITM= 60A tp= 380µs
Tj=25
°C
MAX
1.8
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
°C
MAX
0.01
mA
Tj=125
°C
MAX
6
dV/dt *
Linear slope up to VD=67%VDRM
gate open
Tj=125
°C
MIN
250
250
V/
µs
(dV/dt)c *
(dI/dt)c = 18A/ms
BTA
(dI/dt)c = 20A/ms
BTB
Tj=125
°C
MIN
10
V/
µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
PG (AV) =1W
PGM = 40W (tp = 20 µs)
IGM =8A (tp =20 µs)
VGM = 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTA41 A/B / BTB41 B
2/5




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