Datenblatt-Suchmaschine für elektronische Bauteile |
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STF20NF20 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STF20NF20 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD20NF20 - STF20NF20 - STP20NF20 Electrical characteristics 5/16 Table 6. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) 18 72 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 20 A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100A/µs VDD = 50V, Tj = 25°C (see Figure 19) 155 775 10 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see Figure 19) 183 1061 11.6 ns nC A |
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Ähnliche Beschreibung - STF20NF20 |
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