BTA2008-800E datasheet(6/12 Pages) NXP

Teilenummer	BTA2008-800E

Bauteilbeschribung	0.8 A Three-quadrant triacs high commutation

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BTA2008_SER_D_E_1

Product data sheet

Rev. 01 — 18 January 2008

6 of 12

NXP Semiconductors

BTA2008 series D and E

0.8 A Three-quadrant triacs high commutation

6.

Static characteristics

Table 5.

Static characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

BTA2008-600D

BTA2008-800D

BTA2008-600E

BTA2008-800E

Unit

Min

Typ

Max

Min

Typ

Max

IGT

gate trigger current VD =12V; IT = 0.1 A; see Figure 8

T2+ G+

0.25

-

5

0.5

-

10

mA

T2+ G

−

0.25

-

5

0.5

-

10

mA

T2

− G−

0.25

-

5

0.5

-

10

mA

IL

latching current

VD =12V; IGT = 0.1 A;

see Figure 10

T2+ G+

-

10

-

12

mA

T2+ G

−

-

20

-

20

mA

T2

− G−

-

10

-

12

mA

IH

holding current

VD =12V; IGT = 0.1 A;

see Figure 11

-

10

-

12

mA

VT

on-state voltage

IT = 0.85 A; see Figure 9

-

1.35

1.6

-

1.35

1.6

V

VGT

gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7

-

0.9

2

-

0.9

2

V

VD = 400 V; IT = 0.1 A; Tj = 125 °C

0.2

0.3

-

0.2

0.3

-

V

ID

off-state current

VD =VDRM(max); Tj = 125 °C

-

0.1

0.5

-

0.1

0.5

mA

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