Datenblatt-Suchmaschine für elektronische Bauteile |
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BA891 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BA891 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 6 page NXP Semiconductors Product specification Band-switching diode BA891 THERMAL CHARACTERISTICS CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 85 K/W SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF =10mA − 1V IR reverse current VR =30V − 20 nA Cd diode capacitance f = 1 MHz; note 1; see Fig.2 VR = 1 V 0.8 1.05 pF VR = 3 V 0.65 0.9 pF rD diode forward resistance f = 100 MHz; note 1; see Fig.3 IF = 3 mA 0.42 0.7 Ω IF = 10 mA 0.28 0.5 Ω LS series inductance 0.6 − nH handbook, halfpage 010 20 30 1 0 0.8 0.6 0.4 0.2 MGL479 VR (V) Cd (pF) Fig.2 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj =25 °C. handbook, halfpage 10 1 10−1 MGL478 10−1 110 IF (mA) rD ( Ω) Fig.3 Diode forward resistance as a function of forward current; typical values. f = 100 MHz; Tj =25 °C. Rev. 04 - 8 January 2008 3 of 6 |
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