Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4148 Datenblatt(PDF) 1 Page - HY ELECTRONIC CORP. |
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1N4148 Datenblatt(HTML) 1 Page - HY ELECTRONIC CORP. |
1 / 3 page SMALL SIGNAL REVERSE VOLTAGE - 75 Volts SWITCHING DIODE FORWARD CURRENT - 0.15Amperes FEATURES ● Silicon epitaxial planar diode ● High speed switching diode ● 500mW power dissipation ● These diodes are also available in glass case DO-34,Mini-MELF MECHANICAL DATA ●Case: DO-35 glass case ●Polarity: Color band denotes cathode ●Weight: 0.004 ounces , 0.13 grams Dimensions in inches and (millimeters) UNIT Reverse Vltage VR V Peak Reverse Voltage VRM V Average Forward Rectified Current Half Wave Rectification with Resist .load at Tamb=25℃ and f≧50HZ Forward Surge Current at t<1s and TJ=25℃ IFSM mA Power Dissipation at Tamb=25℃ PTOT mW Junction Temperature TJ ℃ Storage Temperature Range TSTG ℃ UNIT Forward Voltage at IF=10mA VF V Leakage Current at VR=20V IR uA at VR=75V IR uA at VR=20V TJ=150℃ IR uA Capacitance at VF=VR=0V Ctot pF Voltage Rise when Switching ON tested with 50mA pulses tp=0.1us.Rise Time<30ns.fp=5to 100HZ Reverse Recovery Time From IF=10mA VR=6V. RL=100 Ω at IR=1mA Thermal Resistance Junction to Ambient RθJA K/W Rectification Effciency at 100MHZ VRF=2V ηV ﹣ NOTE:(1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS ﹣ MIN - ﹣ ﹣ ﹣ ~ 413 ~ 0.45 ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ ﹣ 1N4148 75 100 150 500 4 350 (1) TYP ELECTRICAL CHARACTERISTICS NOTE:(1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature . MAX 1 4 2.5 25 5 50 175 ﹣65 to﹢175 1N4148 v ns mA IO Vfr trr ﹣ - 500 (1) .020 (0.51) TYP. 1.083(27.5) MIN .150(3.8) MAX .079 (2.0) MAX 1.083(27.5) MIN D0 - 35 |
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Ähnliche Beschreibung - 1N4148 |
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