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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SPA11N60C3 Datenblatt(PDF) 1 Page - Infineon Technologies AG |
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SPA11N60C3 Datenblatt(HTML) 1 Page - Infineon Technologies AG |
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2005-0 9-21 Rev. 2. 6 Page 1 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) PG-TO262-3 PG-TO220-3 -31 PG-TO220 P-TO220-3-31 1 2 3 Marking 11N60C3 11N60C3 11N60C3 Type Package Ordering Code SPP11N60C3 PG-TO220 -3 Q67040-S4395 SPI11N60C3 PG-TO262-3 Q67042-S4403 SPA11N60C3 PG-TO220-3 -31 SP000216312 Maximum Ratings Parameter Symbol Value Unit SPA Continuous drain current TC = 25 °C TC = 100 °C ID 11 7 111) 71) A Pulsed drain current, tp limited by Tjmax ID puls 33 33 A Avalanche energy, single pulse ID=5.5A, VDD=50V EAS 340 340 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=11A, VDD=50V EAR 0.6 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage static VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 125 33 W SPP_I Operating and storage temperature Tj , Tstg -55...+150 °C Reverse diode dv/dt dv/dt 15 V/ns 7) |
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