Datenblatt-Suchmaschine für elektronische Bauteile |
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1N4141 Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1N4141 Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 2 page GALAXY ELECTRICAL FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability MECHANICAL DATA Cas e: JEDEC DO-27,m olded plas tic Term inals : Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces ,1.15 gram s Mounting pos ition: Any Ratings at 25 am bient tem perature unless otherwise s pecified. Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%. 1N 4139 1N 4141 1N 4142 1N 4143 1N 4144 1N 4145 1N 4146 UNITS Maxim um recurrent peak revers e voltage VRRM 50 200 400 600 800 1000 1200 V Maximum RMS voltage VRMS 35 140 280 420 560 700 840 V Maxim um DC blocking voltage VDC 50 200 400 600 800 1000 1200 V Maxim um average forward rectified current 9.5m m lead length, @TA=75 Peak forward surge current 10m s s ingle half-s ine-wave superim pos ed on rated load @TJ=125 Maxim um ins tantaneous forward voltage @ 3.0 A VF V Maxim um revers e current @TA=25 at rated DC blocking voltage @TA=100 Typical junction capacitance (Note1) CJ pF Typical therm al res is tance (Note2) R JA /W Operating junction tem perature range TJ Storage tem perature range TSTG A Eas ily cleaned with Free, Alcohol, Isopropanol and s im ilar s olvents 70 PLASTIC SILICON RECTIFIER VOLTAGE RANGE: 50 --- 1200 V CURRENT: 3.0 A DO - 27 100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 1N4139---1N4146 A 300.0 IR IFSM IF(AV) 1N 4140 100 3.0 Note: 1.Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2.Thermal resistance f rom junction to ambient. 100.0 A - 55 ---- + 150 - 55 ---- + 150 1.0 35 10.0 20 www.galaxycn.com BL BLGALAXY ELECTRICAL Document Number 0260008 1. |
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