Datenblatt-Suchmaschine für elektronische Bauteile |
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L3100B Datenblatt(PDF) 5 Page - STMicroelectronics |
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L3100B Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 8 page 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 I (A) TSM F=50Hz Tj initial=25 °C t(s) Figure 1 : Surge peak current versus overload duration. 0 10 20 3040506070 0.98 0.99 1.00 1.01 1.02 1.03 1.04 Figure 3 : Relative variation of breakdown voltage versus ambient temperature. 110 100 0 20 40 60 80 100 Figure 4 : Junction capacitance versus reverse applied voltage. 0 1020 304050 6070 0.7 0.8 0.9 1.0 1.1 1.2 Figure 2 : Relative variation of holding current versus junction temperature. L3100B/L3100B1 5/8 |
Ähnliche Teilenummer - L3100B |
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Ähnliche Beschreibung - L3100B |
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