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BC848A Datenblatt(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited

Teilenummer BC848A
Bauteilbeschribung  NPN general purpose Transistor
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Hersteller  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

BC848A Datenblatt(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited

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BL Galaxy Electrical
Production specification
NPN
general purpose Transistor
BC846/847/848
Document number: BL/SSSTC043
www.galaxycn.com
Rev.A
2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN
TYP MAX
UNIT
Collector-base breakdown voltage
BC846
BC847
BC848
V(BR)CBO IC=10μA,IE=0
80
50
30
V
Collector-emitter breakdown voltage
BC846
BC847
BC848
V(BR)CEO IC=10mA,IB=0
B
65
45
30
V
Emitter-base breakdown voltage
BC846
BC847
BC848
V(BR)EBO IE=10μA,IC=0
6
6
5
V
Collector cut-off current
BC846
BC847
BC848
ICBO
VCB=70V,IE=0
VCB=50V,IE=0
VCB=30V,IE=0
0.1
μA
Collector cut-off current
BC846
BC847
BC848
ICEO
VCE=60V,IB=0
B
VCE=45V,IB=0
B
VCE=30V,IB=0
B
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
BC846A,847A,848A
BC846B,847B,848B
BC846C,847C,848C
hFE
VCE=5V,IC=2mA
110
200
420
220
450
800
Collector-emitter saturation voltage
VCE(sat)
IC=100mA, IB=5m
B
A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB=5m
B
A
1.1
V
Transition frequency
fT
VCE=5V, IC= 10mA
f=100MHz
100
MHz


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