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BC846W Datenblatt(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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BC846W Datenblatt(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor BC846W/BC847W/BC848W Document number: BL/SSSTF045 www.galaxycn.com Rev.A 1 FEATURES Low Current. Low voltage. Power dissipation.(PC=200mW) APPLICATIONS General purpose switching and amplification application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code BC846W 1A/1B SOT-323 BC847W 1E/1F/1G SOT-323 BC848W 1Js/1Ks/1Ls SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage BC846W BC847W BC848W 80 50 30 V VCEO Collector-Emitter Voltage BC846W BC847W BC848W 65 45 30 V VEBO Emitter-Base Voltage BC846W,BC847W BC848W 6 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -65~150 ℃ Pb Lead-free |
Ähnliche Teilenummer - BC846W |
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Ähnliche Beschreibung - BC846W |
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