Datenblatt-Suchmaschine für elektronische Bauteile |
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TSIXXB1 Datenblatt(PDF) 7 Page - STMicroelectronics |
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TSIXXB1 Datenblatt(HTML) 7 Page - STMicroelectronics |
7 / 9 page TSIxxB1 7/9 Type IRM @VRM VBO @IBO IH IBO C note1 note2 note1 note3 µAV V mA mA mA pF max. max. min. min. max. typ. TSI62B1 1 5 50 62 90 150 50 400 200 TSI180B1 1 5 50 180 250 150 50 400 200 TSI200B1 1 5 50 200 290 150 50 400 200 TSI220B1 1 5 50 220 330 150 50 400 200 TSI265B1 1 5 50 265 380 150 50 400 200 Note 1 : Measured at 50 Hz, one cycle Note 2 : See test cricuit Note 3 : VR = 0V, F = 1MHz, between pins 1 and 8. ELECTRICAL CHARACTERISTICS (Tamb =25°C) 1 - PROTECTION DEVICES PARAMETERS Symbol Test condition Value Unit VF (for one diode) IF =20mA IF = 100 mA 0.9 1.1 V V 2 - DIODE BRIDGE PARAMETERS FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT : GO - NO GO TEST This is a GO-NOGO Test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE : s 1) Adjust the current level at the IH value by short circuiting the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000 µs. 3) The D.U.T will come back off-state within a duration of 50 ms max. R -VP VBAT =-48 V Surge generator D.U.T. |
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Ähnliche Beschreibung - TSIXXB1 |
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