Datenblatt-Suchmaschine für elektronische Bauteile |
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TD62593 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TD62593 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page TD62593,594,597,598AFNG 2007-07-23 3 Test Circuit 1. ICEX 2. hFE, VCE (sat) 3. IIN (ON) 4. tON, tOFF Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns Note 2: See below Input Condition TYPE NUMBER RIN VIH TD62593AFNG, TD62597AFNG 0 Ω 3 V TD62594AFNG, TD62598AFNG 0 Ω 10 V Note 3: CL includes probe and jig capacitance Precautions for Using This IC does not integrate protection circuits such as overcurrent and overvoltage protectors. Thus, if excess current or voltage is applied to the IC, the IC may be damaged. Please design the IC so that excess current or voltage will not be applied to the IC. Utmost care is necessary in the design of the output line, VCC and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. |
Ähnliche Teilenummer - TD62593 |
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Ähnliche Beschreibung - TD62593 |
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