Datenblatt-Suchmaschine für elektronische Bauteile |
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STP30NF10 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STP30NF10 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 16 page STB30NF10 - STP30NF10 - STP30NF10FP Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit D2PAK TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 kΩ)100 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 35 18 A ID Drain current (continuous) at TC = 100°C 25 13 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 140 72 A Ptot Total dissipation at TC = 25°C 115 30 W Derating Factor 0.77 0.2 W/°C dv/dt (2) 2. ISD ≤30A, di/dt ≤400A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 28 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 15A, VDD = 30V Single pulse avalanche energy 275 mJ VISO Insulation withstand voltage (DC) -- 2500 V Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data D2PAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 1.30 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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