Datenblatt-Suchmaschine für elektronische Bauteile |
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SPI07N60S5 Datenblatt(PDF) 6 Page - Infineon Technologies AG |
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SPI07N60S5 Datenblatt(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page 6 2002-07-26 SPI07N60S5 SPP07N60S5, SPB07N60S5 Final data Avalanche energy EAS = f (Tj) par.: ID=5.5A, VDD=50V 20 40 60 80 100 120 °C 160 Tj 0 20 40 60 80 100 120 140 160 180 200 220 mJ 260 Avalanche SOA IAR = f (tAR) par.: Tj ≤ 150 °C 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 µs tAR 0 1 2 3 4 5 6 A 8 Tj(START)=125°C Tj(START)=25°C Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj 540 560 580 600 620 640 660 680 V 720 SPP07N60S5 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS, ID = 350 µA -60 -20 20 60 100 °C 180 Tj 0 1 2 3 4 5 V 7 typ. max. min. |
Ähnliche Teilenummer - SPI07N60S5_02 |
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Ähnliche Beschreibung - SPI07N60S5_02 |
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