KMA010P20Q datasheet(1/5 Pages) KEC

Teilenummer	KMA010P20Q

Bauteilbeschribung	P-Ch Trench MOSFET

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2007. 3. 22

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SEMICONDUCTOR

TECHNICAL DATA

KMA010P20Q

P-Ch Trench MOSFET

Revision No : 1

General Description

It s mainly suitable for battery pack or power management

in cell phone, and PDA.

FEATURES

VDSS=-20V, ID=-10A.

Drain-Source ON Resistance.

: RDS(ON)=14m (Max.) @ VGS=-4.5V, ID=-10A.

: RDS(ON)=24m (Max.) @ VGS=-2.5V, ID=-7.6A.

MAXIMUM RATING (Ta=25

)

B2

G

H

B1

1

4

5

8

A

P

D

L

T

FLP-8

0.20+0.1/-0.05

T

P

1.27

MILLIMETERS

DIM

A

4.85

0.2

+

_

B1

3.94

0.2

+

_

B2

6.02

0.3

+

_

D

0.4

0.1

+

_

G

0.15+0.1/-0.05

H

1.63

0.2

+

_

L

0.65

0.2

+

_

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

VDSS

-20

V

Gate-Source Voltage

VGSS

12

V

Drain Current

DC

ID *

10

A

Pulsed (Note1)

IDP*

48

Source-Drain Diode Current

IS *

-2.3

A

Drain Power Dissipation

Ta=25

PD *

1.6

W

Ta=100

0.625

Maximum Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

Thermal Resistance, Junction to Ambient

RthJA *

80

/W

* : Surface Mounted on 1

1 FR4 Board, t

5sec.

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