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IRF1404PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF1404PBF Datenblatt(HTML) 2 Page - International Rectifier |
2 / 10 page IRF1404PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.039 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.0035 0.004 Ω VGS = 10V, ID = 121A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA gfs Forward Transconductance 76 ––– ––– S VDS = 25V, ID = 121A ––– ––– 20 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Qg Total Gate Charge ––– 131 196 ID = 121A Qgs Gate-to-Source Charge ––– 36 ––– nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– 37 56 VGS = 10V td(on) Turn-On Delay Time ––– 17 ––– VDD = 20V tr Rise Time ––– 190 ––– ID = 121A td(off) Turn-Off Delay Time ––– 46 ––– RG = 2.5Ω tf Fall Time ––– 33 ––– RD = 0.2Ω Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 5669 ––– VGS = 0V Coss Output Capacitance ––– 1659 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 223 ––– ƒ = 1.0MHz, See Fig. 5 Coss Output Capacitance ––– 6205 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 1467 ––– VGS = 0V, VDS = 32V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 2249 ––– VGS = 0V, VDS = 0V to 32V nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) ISD ≤ 121A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting TJ = 25°C, L = 85µH RG = 25Ω, IAS = 121A. (See Figure 12) Pulse width ≤ 400µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.5 V TJ = 25°C, IS = 121A, VGS = 0V trr Reverse Recovery Time ––– 78 117 ns TJ = 25°C, IF = 121A Qrr Reverse RecoveryCharge ––– 163 245 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 202 808 A
Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. |
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