Datenblatt-Suchmaschine für elektronische Bauteile |
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M27C322-80P6 Datenblatt(PDF) 5 Page - STMicroelectronics |
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M27C322-80P6 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 13 page 5/13 M27C322 Table 7. Read Mode DC Characteristics (1) (TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; VCC = 5V ± 10%; VPP = VCC) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Maximum DC voltage on Output is VCC +0.5V. Table 8. Read Mode AC Characteristics (1) (TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; VCC = 5V ± 10%; VPP = VCC) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions. Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0v ≤ VIN ≤ VCC ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±10 µA ICC Supply Current E = VIL, GVPP = VIL, IOUT = 0mA, f = 8MHz 70 mA E = VIL, GVPP = VIL, IOUT = 0mA, f = 5MHz 50 mA ICC1 Supply Current (Standby) TTL E = VIH 1mA ICC2 Supply Current (Standby) CMOS E > VCC – 0.2V 100 µA IPP Program Current VPP = VCC 10 µA VIL Input Low Voltage –0.3 0.8 V VIH (2) Input High Voltage 2 VCC + 1 V VOL Output Low Voltage IOL = 2.1mA 0.4 V VOH Output High Voltage TTL IOH = –400µA 2.4 V Symbol Alt Parameter Test Condition M27C322 Unit -80 (3) -100 Min Max Min Max tAVQV tACC Address Valid to Output Valid E = VIL, GVPP = VIL 80 100 ns tELQV tCE Chip Enable Low to Output Valid GVPP = VIL 80 100 ns tGLQV tOE Output Enable Low to Output Valid E = VIL 40 50 ns tEHQZ (2) tDF Chip Enable High to Output Hi-Z GVPP = VIL 0 40 0 40 ns tGHQZ (2) tDF Output Enable High to Output Hi-Z E = VIL 0 40 0 40 ns tAXQX tOH Address Transition to Output Transition E = VIL, GVPP = VIL 55 ns |
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Ähnliche Beschreibung - M27C322-80P6 |
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