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STB4NK60Z Datenblatt(PDF) 4 Page - STMicroelectronics |
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STB4NK60Z Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 20 page Electrical characteristics STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP 4/20 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID =1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, TC = 125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 33.75 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2 A 1.76 2 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VDS = 15 V, ID = 2 A 3 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 510 67 13 pF pF pF Coss eq. (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance VDS =0, VDS = 0 to 480 V 38.5 pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) 12 9.5 29 16.5 ns ns ns ns tr(Voff) tr tc Off-voltage rise time Fall time Cross-over time VDD = 480 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19) 12 12 19.5 ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 4 A, VGS = 10 V (see Figure 18) 18.8 3.8 9.8 26 nC nC nC |
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