Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7421D1 Datenblatt(PDF) 5 Page - International Rectifier |
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IRF7421D1 Datenblatt(HTML) 5 Page - International Rectifier |
5 / 8 page IRF7421D1 www.irf.com 5 Power Mosfet Characteristics Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 0 200 400 600 800 1000 1 1 0 100 DS V , D rain-to -S ourc e V oltage (V ) A V = 0 V , f = 1 M H z C = C + C , C S H O R TE D C = C C = C + C GS iss g s gd ds rss g d o ss ds g d C iss C oss C rss 0 4 8 12 16 20 0 5 10 15 20 25 30 Q , Tota l G ate C h arg e (n C ) G A F O R TE ST C IRCUIT SE E F IG U RE 9 V = 2 4 V V = 1 5 V DS DS I = 4 .1 A D 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 Notes: 1. Duty factor D = t / t 2. Peak T = P x Z + T 1 2 J DM thJA A P t t DM 1 2 t , Rectangular Pulse Duration (sec) 1 0.01 0.02 0.05 0.10 0.20 D = 0.50 SINGLE PULSE (THERMAL RESPONSE) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 7421d1.p65 8/20/98, 4:07 PM 5 |
Ähnliche Teilenummer - IRF7421D1_98 |
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Ähnliche Beschreibung - IRF7421D1_98 |
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