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IRF7488PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7488PBF Datenblatt(HTML) 2 Page - International Rectifier |
2 / 9 page IRF7488PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 9.3 ––– ––– S VDS = 15V, ID = 3.8A Qg Total Gate Charge ––– 38 57 ID = 3.8A Qgs Gate-to-Source Charge ––– 9.1 nC VDS = 40V Qgd Gate-to-Drain ("Miller") Charge ––– 12 VGS = 10V, td(on) Turn-On Delay Time ––– 13 ––– VDD = 40V tr Rise Time ––– 12 ––– ID = 3.8A td(off) Turn-Off Delay Time ––– 44 ––– RG = 9.1Ω tf Fall Time ––– 16 ––– VGS = 10V Ciss Input Capacitance ––– 1680 ––– VGS = 0V Coss Output Capacitance ––– 270 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 32 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1760 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 64V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 340 ––– VGS = 0V, VDS = 0V to 64V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 96 mJ IAR Avalanche Current ––– 3.8 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 3.8A, VGS = 0V trr Reverse Recovery Time ––– 65 98 ns TJ = 25°C, IF = 3.8A Qrr Reverse RecoveryCharge ––– 190 290 nC di/dt = 100A/µs Diode Characteristics 2.3 50 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 80 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.089 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– 24 29 m Ω VGS = 10V, ID = 3.8A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 80V, VGS = 0V ––– ––– 250 VDS = 64V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V IGSS IDSS Drain-to-Source Leakage Current |
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