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HCF4010B Datenblatt(PDF) 4 Page - STMicroelectronics |
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HCF4010B Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 8 page HCF4010B 4/8 DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb =25°C, CL = 50pF, RL = 200KΩ,tr =tf = 20 ns) (*) Typical temperature coefficient for all VDD value is 0.3 %/°C. TEST CIRCUIT CL = 50pF or equivalent (includes jig and probe capacitance) RL = 200KΩ RT =ZOUT of pulse generator (typically 50Ω) Symbol Parameter Test Condition Value (*) Unit VDD (V) VI (V) VCC (V) Min. Typ. Max. tTLH Output Transition Time 5 5 5 150 350 ns 10 10 10 75 15 15 15 15 55 110 tTHL Output Transition Time 5 5 5 35 70 ns 10 10 10 20 40 15 15 15 15 30 tPLH Propagation Delay Time 5 5 5 100 200 ns 10 10 10 50 100 10 10 5 50 100 15 15 15 35 70 15 15 5 35 70 tPHL Propagation Delay Time 5 5 5 65 130 ns 10 10 10 35 70 10 10 5 30 70 15 15 15 25 50 15 15 5 20 40 |
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