HAT2092R datasheet(4/8 Pages) RENESAS

Teilenummer	HAT2092R

Bauteilbeschribung	Silicon N Channel Power MOS FET High Speed Power Switching

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HAT2092R

Rev.3.00 Jan. 13, 2005 page 4 of 7

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

50

40

30

20

10

-40

0

40

80

120

160

0

ID = 2 A, 5 A

2 A, 5 A, 10 A

VGS = 4.5 V

10 V

Pulse Test

330

0.1

1

10

100

0.3

10

100

30

1

0.3

3

0.1

Tc = -25

°C

VDS = 10 V

Pulse Test

75

°C

25

°C

10 A

Reverse Drain Current

IDR (A)

Body–Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Drain Current ID (A)

Switching Characteristics

0.2

0.5

1

2

5

10

20

100

20

50

10

010

20

30

40

50

10000

3000

1000

300

100

30

10

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

100

20

50

10

2

5

0.1

di/dt = 50 A/

µs

VGS = 0, Ta = 25°C

0.2

0.5

1

2

5

10

20

0.1

VGS = 10 V, VDS = 10 V

Rg = 4.7

Ω, duty < 1 %

tf

tr

td(off)

td(on)

50

40

30

20

10

0

20

16

12

8

4

8

1624

3240

0

ID = 11 A

VGS

VDS

VDD = 25 V

10 V

5 V

VDD = 25 V

10 V

5 V

Gate Charge

Qg (nc)

Dynamic Input Characteristics

200

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