SI4562DY datasheet(1/7 Pages) VISHAY

Teilenummer	SI4562DY

Bauteilbeschribung	N- and P-Channel 2.5-V (G-S) MOSFET

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Vishay Siliconix

Si4562DY

Document Number: 70717

S-51109-Rev. B, 04-Apr-06

www.vishay.com

1

Work-in-Progress

N- and P-Channel 2.5-V (G-S) MOSFET

FEATURES

•

TrenchFet® Power MOSFET: 2.5 Rated

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

N-Channel

20

0.025 at VGS = 4.5 V

7.1

0.035 at VGS = 2.5 V

6.0

P-Channel

- 20

0.033 at VGS = - 4.5 V

- 6.2

0.050 at VGS = - 2.5 V

- 5.0

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4562DY-T1

Si4562DY-T1-E3 (Lead (Pb)-free)

N-Channel MOSFET

D1

G1

S1

S2

G2

D2

P-Channel MOSFET

Notes:

a. Surface Mounted on FR4 Board, t

≤10 sec.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

20

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

7.1

- 6.2

A

TA = 70 °C

5.7

- 4.9

Pulsed Drain Current

IDM

40

- 40

Continuous Source Current (Diode Conduction)a

IS

1.7

- 1.7

Maximum Power Dissipationa

TA = 25 °C

PD

2.0

W

TA = 70 °C

1.3

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N- or P-Channel

Unit

Maximum Junction-to-Ambienta

RthJA

62.5

°C/W

Available

Pb-free

RoHS*

COMPLIANT

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