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SI4562DY Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI4562DY
Bauteilbeschribung  N- and P-Channel 2.5-V (G-S) MOSFET
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Document Number: 70717
S-51109-Rev. B, 04-Apr-06
Vishay Siliconix
Si4562DY
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
N-Ch
0.6
1.6
V
VDS = VGS, ID = - 250 µA
P-Ch
- 0.6
- 1.6
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
N-Ch
± 100
nA
P-Ch
± 100
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
N-Ch
1
µA
VDS = - 20 V, VGS = 0 V
P-Ch
- 1
VDS = 20 V, VGS = 0 V, TJ = 55 °C
N-Ch
5
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
P-Ch
- 5
On-State Drain Currentb
ID(on)
VDS ≥ 5 V, VGS = 4.5 V
N-Ch
20
A
VDS ≤ - 5 V, VGS = - 4.5 V
P-Ch
- 20
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 7.1 A
N-Ch
0.019
0.025
Ω
VGS = - 4.5 V, ID = - 6.2 A
P-Ch
0.027
0.033
VGS = 2.5 V, ID = 6.0 A
N-Ch
0.025
0.035
VGS = - 2.5 V, ID = - 5.0 A
P-Ch
0.040
0.050
Forward Transconductanceb
gfs
VDS = 10 V, ID = 7.1 A
N-Ch
27
S
VDS = - 10 V, ID = - 6.2 A
P-Ch
20
Diode Forward Voltageb
VSD
IS = 1.7 A, VGS = 0 V
N-Ch
1.2
V
IS = - 1.7 A, VGS = 0 V
P-Ch
- 1.2
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 7.1 A
P-Channel
VDS = - 10 V, VGS = - 4.5 V, ID = - 6.2 A
N-Ch
25
50
nC
P-Ch
22
35
Gate-Source Charge
Qgs
N-Ch
6.5
P-Ch
7
Gate-Drain Charge
Qgd
N-Ch
4
P-Ch
3.5
Turn-On Delay Time
td(on)
N-Channel
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
P-Channel
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, RG = 6 Ω
N-Ch
40
60
ns
P-Ch
27
50
Rise Time
tr
N-Ch
40
60
P-Ch
32
50
Turn-Off Delay Time
td(off)
N-Ch
90
150
P-Ch
95
150
Fall Time
tf
N-Ch
40
60
P-Ch
45
70
Sorce-Drain Reverse Recovery Tme
trr
IF = 1.7 A, di/dt = 100 A/µs
N-Ch
40
80
IF = - 1.7 A, di/dt = 100 A/µs
P-Ch
40
80


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