Datenblatt-Suchmaschine für elektronische Bauteile |
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SDD320N12 Datenblatt(PDF) 2 Page - Sirectifier Semiconductors |
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SDD320N12 Datenblatt(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page SDD320 Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=600A; TVJ=25 oC 1.2 VTO For power-loss calculations only 0.75 V rT 0.63 m IRRM TVJ=TVJM; VR=VRRM 40 mA TVJ=TVJM per diode; DC current per module RthJC 0.129 0.065 K/W per diode; DC current per module RthJK 0.169 0.0845 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 uC QS TVJ=125 oC; IF=400A; -di/dt=50A/us 760 IRM 275 A FEATURES * International standard package * Direct copper bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ |
Ähnliche Teilenummer - SDD320N12 |
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Ähnliche Beschreibung - SDD320N12 |
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