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SDD190 Datenblatt(PDF) 4 Page - Sirectifier Semiconductors |
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SDD190 Datenblatt(HTML) 4 Page - Sirectifier Semiconductors |
4 / 4 page SDD190 Diode-Diode Modules Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 6 Transient thermal impedance junction to case (per diode) Fig. 7 Transient thermal impedance junction to heatsink (per diode) R thJK for various conduction angles d: d R thJK (K/W) DC 0.31 180 oC 0.323 120 oC 0.333 60 oC 0.360 30 oC 0.395 Constants for Z thJK calculation: i R thi (K/W) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 4 0.1 1.29 R thJC for various conduction angles d: d R thJC (K/W) DC 0.210 180 oC 0.223 120 oC 0.233 60 oC 0.260 30 oC 0.295 Constants for Z thJC calculation: i R thi (K/W) t i (s) 1 0.0087 0.001 2 0.0163 0.065 3 0.185 0.4 3 x SDD190 |
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Ähnliche Beschreibung - SDD190 |
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