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STPRF1615CT Datenblatt(PDF) 1 Page - Sirectifier Semiconductors

Teilenummer STPRF1615CT
Bauteilbeschribung  Ultra Fast Recovery Diodes
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Hersteller  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

STPRF1615CT Datenblatt(HTML) 1 Page - Sirectifier Semiconductors

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STPRF1605CT thru STPRF1620CT
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
STPRF1605CT
STPRF1610CT
STPRF1615CT
STPRF1620CT
VRRM
V
50
100
150
200
VRMS
V
35
70
105
140
VDC
V
50
100
150
200
A=Anode, C=Cathode, TAB=Cathode
Symbol
Characteristics
I(AV)
Maximum Average Forward Rectified Current
@TC=100 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 8.0A DC
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=100 C
CJ
Typical Thermal Resistance (Note 3)
TRR
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance Per Element (Note 1)
TJ, TSTG
Operating And Storage Temperature Range
Maximum Ratings
16
125
0.95
5
500
110
35
1.5
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
ROJC
C/W
o
C
o
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
A
A
C
C(TAB)
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Milimeter
Min.
Max.
12.70
13.97
14.73
16.00
9.91
10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500
0.550
0.580
0.630
0.390
0.420
0.139
0.161
0.230
0.270
0.100
0.125
0.045
0.065
0.110
0.230
0.025
0.040
0.100
BSC
0.170
0.190
0.045
0.055
0.014
0.022
0.090
0.110
Dimensions TO-220AB
Ultra Fast Recovery Diodes


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