Datenblatt-Suchmaschine für elektronische Bauteile |
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STD116GK16 Datenblatt(PDF) 3 Page - Sirectifier Semiconductors |
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STD116GK16 Datenblatt(HTML) 3 Page - Sirectifier Semiconductors |
3 / 4 page STD/SDT116 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature Fig. 4 Gate trigger characteristics Fig. 6 Gate trigger delay time 3 x STD/SDT116 |
Ähnliche Teilenummer - STD116GK16 |
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Ähnliche Beschreibung - STD116GK16 |
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