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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BTA20-600BWRG Datenblatt(PDF) 1 Page - STMicroelectronics |
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BTA20-600BWRG Datenblatt(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  ® 1/6 Table 1: Main Features DESCRIPTION The BTA20 BW/CW triac family are high perform- ance glass passivated chips technology. The snubberless concept offer suppression of RC network and it is suitable for application such as phase control and static switching on inductive or resistive load. Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). Symbol Value Unit IT(RMS) 20 A VDRM/VRRM 600 and 700 V IGT (Q 1) (max) 35 and 50 mA BTA20 Series 20A TRIACS REV. 2 February 2006 SNUBBERLESS™ Table 2: Order Codes Part Numbers Marking BTA20-600BWRG BTA20-600BW BTA20-600CWRG BTA20-600CW BTA20-700BWRG BTA20-700BW BTA20-700CWRG BTA20-700CW A2 A1 G TO-220AB Insulated G A2 A1 Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) Tc = 70°C 20 A ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 10 ms 210 A F = 60 Hz t = 8.3 ms 200 I²tI²t Value for fusing tp = 10 ms 200 A²s dI/dt Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs Repetitive F = 50 Hz Tj = 125°C 20 A/µs Non repetitive 100 VDSM/VRSM Non repetitive peak off-state voltage tp = 10 ms Tj = 25°C VDSM/VRSM + 100 V IGM Peak gate current tp = 20 µs Tj = 125°C 4A VGM Peak positive gate voltage tp = 20 µs 16 V PG(AV) Average gate power dissipation Tj = 125°C 1W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C |
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Ähnliche Beschreibung - BTA20-600BWRG |
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