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MSC80197 Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer MSC80197
Bauteilbeschribung  RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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MSC80197 Datenblatt(HTML) 1 Page - STMicroelectronics

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October 1992
GENERAL PURPOSE LINEAR APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S011)
hermetically sealed
.
EMITTER BALLASTED
.
CLASS A LINEAR OPERATION
.
COMMON EMITTER
.
VSWR CAPABILITY 15:1 @ RATED
CONDITIONS
.
ft 3.2 GHz TYPICAL
.
NOISE FIGURE 12.5 dB @ 2 GHz
.
POUT
= 31.7 dBm MIN. @ 2.0 GHz
DESCRIPTION
The MSC80197 is a hermetically sealed NPN
power transistor featuring a unique matrix structure.
This device is specifically designed for Class A
linear applications to provide high gain and high
output power at the 1.0 dB compression point.
PIN CONNECTION
BRANDING
80197
ORDER CODE
MSC80197
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
(see Safe Area)
—
W
IC
Device Bias Current
700
mA
VCE
Collector-Emitter Bias Voltage*
20
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
− 65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
8.5
°C/W
*Applies only to rated RF amplifier operation
MSC80197
1. Collector
3. Base
2. Emitter
4. Emitter
THERMAL DATA
1/6


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