STP30NM60ND datasheet(4/15 Pages) STMICROELECTRONICS

Teilenummer	STP30NM60ND

Bauteilbeschribung	N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

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Electrical characteristics

STP/F30NM60ND - STB30NM60ND - STI30NM60ND - STW30NM60ND

4/15

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS = 0

600

V

dv/dt(1)

1.

Characteristic value at turn off on inductive load

Drain source voltage slope

VDD= 480V, ID= 25A,

VGS= 10V

48

V/ns

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating @125°C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3

4

5

V

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 12.5 A

0.11

0.13

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15 V, ID = 12.5 A

TBD

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

3000

600

90

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0V, VDS = 0V to

480V

TBD

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD =300 V, ID = 12.5A

RG =4.7Ω VGS = 10V

(see Figure 7),

(see Figure 2)

TBD

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480V, ID = 25A,

VGS = 10V,

(see Figure 3)

100

TBD

nC

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

Open drain

1.6

Ω

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