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STP40NF20 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STP40NF20
Bauteilbeschribung  N-channel 200V - 0.038廓 -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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Electrical characteristics
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
4/17
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1mA, VGS =0
200
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max ratings
VDS = max ratings@125°C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 20A
0.038 0.045
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward
transconductance
VDS = 15V, ID =20A
30
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
2500
510
78
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 100V, ID = 20A
RG =4.7Ω VGS = 10V
(see Figure 17)
20
44
74
22
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 160V, ID = 40A,
VGS = 10V
(see Figure 18)
75
13.2
35.5
nC
nC
nC


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