STP6NK90Z_07 datasheet(5/18 Pages) STMICROELECTRONICS

Teilenummer	STP6NK90Z

Bauteilbeschribung	N-channel 900V - 1.56廓 - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH??Power MOSFET

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STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z

Electrical characteristics

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2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID =1mA, VGS = 0

900

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125°C

1

50

µA

IGSS

Gate-body leakage

Current (VDS = 0)

VGS = ± 20 V

± 10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

33.75

4.5

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 2.9 A

1.56

2

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15v, ID = 2.9 A

5S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1350

130

26

pF

Coss eq.

(2)

2.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance

VDS =0V, VDS = 0V to 720V

70

pF

td(on)

tr

tr(off)

tr

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 450 V, ID = 3 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

17

45

20

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 720 V, ID = 5.8 A,

VGS = 10 V

46.5

8.5

25

60.5

nC

Tr(Voff)

Tr

Tc

Off-voltage rise time

Fall time

Cross-over time

VDD = 720 V, ID = 5.8 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 22)

11

12

20

ns

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