SD2922

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

s

GOLD METALLIZATION

s

EXCELLENT THERMAL STABILITY

s

COMMON SOURCE CONFIGURATION

s

POUT = 300W MIN. WITH 12.5 dB GAIN

@175 MHz

DESCRIPTION

The SD2922 is a gold metallized N-Channel MOS

field-effect RF power transistor. The SD2922 is

intended

for

use

in

50V

dc

large signal

applications up to 200 MHz

PIN CONNECTION

November 1999

Symbol

Parameter

Val ue

Uni t

Drain Source Voltage

125

V

Ω)

125

V

Gat e-Source Volt age

±20

V

Drain Current

40

A

Power Dissipation

500

W

Max. O perating Junction Temperature

+200

Storage T emperat ure

-65 to 150

THERMAL DATA

Junction-Case Thermal Resistance

0.35

Case Heat sink Thermal Resist ance

∗

0.12

∗ Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent).

M244

epoxy sealed

®

ORDER CODE

BRANDING

SD2922

SD2922

1. Drain

3. Source

2. Gate

1/13