SMBYW01-200 datasheet(3/5 Pages) STMICROELECTRONICS

Teilenummer	SMBYW01-200

Bauteilbeschribung	HIGH EFFICIENCY FAST RECOVERY DIODE

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

PF(av)(W)

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

IF(av) (A)

Fig. 1: Average forward power dissipation versus

average forward current .

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0

1

2

3

4

5

6

7

8

9

10

IM(A)

δ

P=1.5W

P=1.0W

P=0.5W

P=0.25W

Fig. 2: Peak current versus form factor.

0

25

50

75

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Tamb(°C)

IF(av)(A)

Rth(j-a)=100°C/W

Rth(j-a)=Rth(j-l)

Fig. 3: Average forward current versus ambient

temperature (

δ=0.5).

1E-3

1E-2

1E-1

1E+0

2

3

4

5

6

7

8

t(s)

IM(A)

Ta=25°C

Ta=50°C

Ta=75°C

Fig. 4: Non repetitive surge peak forward current

versus overload duration.

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

tp(s)

Zth(j-a)(°C/W)

Single pulse

δ = 0.2

δ = 0.5

δ = 0.1

Fig. 5: Variation of thermal impedance junction to

ambient versus pulse duration (recommended pad

layout, epoxy FR4, e(Cu)=35

µm).

0.0

0.4

0.8

1.2

1.6

2.0

2.4

0.01

0.10

1.00

10.00

50.00

IFM(A)

VFM(V)

Tj=125°C

Tj=25°C

Fig 6: Forward voltage drop versus forward current

(maximum values).

SMBYW01-200

3/5

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