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SMP100LC-270 Datenblatt(PDF) 3 Page - STMicroelectronics |
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SMP100LC-270 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 8 page SMP100LC-xxx 3/8 Type IRM @VRM max. IR @VR max. Note 1 VBO @IBO max. Note 2 IH min. Note 3 C typ. Note 4 µAV µAV V mA mA pF SMP100LC-140 2 120 50 140 185 800 150 30 SMP100LC-200 2 170 50 200 265 800 150 30 SMP100LC-270 2 230 50 262 350 800 150 30 Note 1: IR measured at VR guarantee VBR >VR Note 2: VRISE = 100V/µS, di/dt < 10 A/µs, IPP = 100A VRISE = 1kV/µS, di/dt < 10 A/µs, IPP = 10A VBO parameters are given by a KeyTek ”System 2” generator with PN2461 module. See test circuits 3 for VBO dynamic parameters Note 3: See functional holding current test circuit 1 Note 4: VR=50V bias, VRMS=1V, F=1MHz. DYNAMIC PARAMETERS Symbol Parameter VRM Stand-off voltage IRM Leakage current at VRM VR Continuous reverse voltage IR Leakage current VBR Breakdown voltage VBO Breakover voltage IH Holding current IBO Breakover current IPP Peak pulse current C Capacitance ELECTRICAL CHARACTERISTICS (Tamb =25 °C) 100 50 %IPP t t rp 0 t Pulse waveform: 10 / 1000 µstr = 10 µs tp = 1000 µs 8/ 20 µstr = 8 µstp = 20 µs 5 / 310 µstr = 5 µs tp = 310 µs 1/ 20 µstr = 1 µstp = 20 µs 2/ 10 µstr = 2 µstp = 10 µs |
Ähnliche Teilenummer - SMP100LC-270 |
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Ähnliche Beschreibung - SMP100LC-270 |
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