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STP9NK60ZD Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer STP9NK60ZD
Bauteilbeschribung  N-channel 600 V - 0.85 廓 - 7 A - D2PAK, TO-220FP, TO-220 SuperFREDMesh??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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Electrical characteristics
STB9NK60ZD - STF9NK60ZD - STP9NK60ZD
4/16
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125 °C
1
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
±10
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 100 µA
2.5
3.5
4.5
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 3.5 A
0.85
0.95
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward
transconductance
VDS = 15 V, ID = 3.5 A
5.3
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
1110
135
30
pF
pF
pF
COSS eq
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance
VGS = 0, VDS = 0 to 480 V
72
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 7 A,
VGS = 10 V
(see Figure 17)
41
8.7
21
53
nC
nC
nC


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