Datenblatt-Suchmaschine für elektronische Bauteile |
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ST2310HI Datenblatt(PDF) 2 Page - STMicroelectronics |
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ST2310HI Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICES Collector Cut -of f Current (VBE =0) VCE = 1500 V 1 mA IEBO Emitt er Cut -of f Current (IC =0) VEB =7 V 1 mA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC = 100 mA L = 25 mH 600 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC =7 A IB =1.75 A 3 V VBE(s at) ∗ Base-Emitter Saturation Voltage IC =7 A IB =1.75 A 1.1 V hFE ∗ DC Current Gain IC =1 A VCE =5 V IC =7 A VCE =5 V 6. 5 25 9.5 ts tf INDUCTIVE LO AD St orage Time Fall Time IC =6 A fh =64 KHz IB(o n) =1.2 A VBB(off) =-2.5 V LB =0.4 µH 2.3 380 2.7 450 µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance ST2310HI 2/6 |
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