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STE110NS20FD Datenblatt(PDF) 5 Page - STMicroelectronics

Teilenummer STE110NS20FD
Bauteilbeschribung  N-channel 200V - 0.022廓 - 110A - ISOTOP MESH OVERLAY??Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE110NS20FD Datenblatt(HTML) 5 Page - STMicroelectronics

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STE110NS20FD
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test condictions
Min.
Typ.
Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 100V, ID = 50A
RG = 4.7Ω VGS = 10V
(see Figure 12)
40
130
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 100V, ID = 100A,
RG = 4.7Ω, VGS = 10V
(see Figure 12)
245
140
220
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
Source-drain current
110
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
440
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 100A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=100A, Tj=150°C
di/dt = 100A/µs,
VDD=160V, (see Figure 17)
225
1.35
12
ns
µC
A


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