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FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• Small size
• High Speed
• Low cost
SYMBOL
PARAMETER
MIN
MAX
UNITS
VBR
Reverse Voltage
130
280
V
TSTG
Storage Temperature
-40
+85
°C
TO
Operating Temperature
-40
+55
°C
TS
Soldering Temperature*
+240
°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ID
Dark Current
7
30
nA
CJ
Junction Capacitance
f = 1 MHz
10
pF
IN
Noise Current Spectral Density f = 100 kHz
0.12
pA/
√Hz
lrange
Spectral Application Range
Spot Scan
400
1100
nm
l= 660nm, VR = 0 V
30
R
Responsivity
l= 830nm, VR = 0 V
47
A/W
Vop
Operating voltage
130
280
V
tr
Response Time**
RL = 50
Ω, l= 675nm
2
nS
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SPECTRAL RESPONSE
0
10
20
30
40
50
60
70
80
Wavelength (nm)
0
10
20
30
40
50
60
70
80
Small Area Silicon Avalanche Photodiode
SD 036-70-62-531
PACKAGE DIMENSIONS INCH / mm
TO-5 PACKAGE
The SD 036-70-62-531 is a 0.9 mm diameter small
area silicon avalanche photodiode (APD) that
provides high gain and low noise, packaged in a
hermetic TO-5 metal can with a flat window.
• Military
• Industrial
• Medical
* 1/16 inch from case for 3 seconds max.
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
CHIP DIMENSIONS INCH [mm]
QE
R
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com