Datenblatt-Suchmaschine für elektronische Bauteile |
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STB3NC90 Datenblatt(PDF) 2 Page - STMicroelectronics |
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STB3NC90 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 9 page STB3NC90Z 2/9 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.25 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 3.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 220 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 900 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 1 mA, VGS = 0 1 V/°C IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±10 µA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 34 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 1.75 A 3.2 3.5 Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max, VGS =10V 3.5 A Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 1.75A 3S Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1250 pF Coss Output Capacitance 78 pF Crss Reverse Transfer Capacitance 7pF |
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