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STD10NF10 Datenblatt(PDF) 5 Page - STMicroelectronics |
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STD10NF10 Datenblatt(HTML) 5 Page - STMicroelectronics |
5 / 14 page STD10NF10 Electrical characteristics 5/14 Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 13 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) 52 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD = 10A, VGS = 0 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10A, di/dt = 100A/µs, VDD = 50V, TJ = 150°C Figure 15 on page 8 90 230 5 ns µC A |
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Ähnliche Beschreibung - STD10NF10 |
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