Datenblatt-Suchmaschine für elektronische Bauteile |
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SDR645CTS1S Datenblatt(PDF) 2 Page - Solid States Devices, Inc |
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SDR645CTS1S Datenblatt(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RU0087C DOC Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SDR643CTS1 thru SDR647CTS1 Electrical Characteristics (Per Leg) Characteristics Symbol Typical Maximum Unit Instantaneous Forward Voltage Drop (IF = 5Adc, TA = 25ºC, 300 msec pulse) (IF = 10Adc, TA = 25ºC, 300 msec pulse) (IF = 15Adc, TA = 25ºC, 300 msec pulse) (IF = 20Adc, TA = 25ºC, 300 msec pulse) (IF = 30Adc, TA = 25ºC, 300 msec pulse) VF1 VF2 VF3 VF4 VF5 0.94 1.0 1.05 1.07 1.1 - - 1.35 - 1.5 Volts Instantaneous Forward Voltage Drop (IF = 15Adc, TA = 100ºC, 300 msec pulse) (IF = 30Adc, TA = 100ºC, 300 msec pulse) (IF = 15Adc, TA = -55ºC, 300 msec pulse) (IF = 30Adc, TA = -55ºC, 300 msec pulse) VF6 VF7 VF8 VF9 0.93 1.00 1.15 1.20 1.25 - 1.5 - Volts Reverse Leakage Current (Rated VR, TA = 25ºC, 300 msec pulse min) SDR647CTS1 ALL OTHER IR1 30 10 150 50 μA Reverse Leakage Current (Rated VR, TA = 100ºC, 300 msec pulse min) (Rated VR, TA = 125ºC, 300 msec pulse min) (Rated VR, TA = 150ºC, 300 msec pulse min) IR2 IR3 IR4 2 8 25 10 - - mA Junction Capacitance (VR = 10 Vdc, TA = 25ºC, f = 1MHz) CJ 60 120 pF Reverse Recovery Time (I F = 0.5 A, IR = 1A, IRR = 0.25A, TA = 25ºC) (I F = 0.5 A, IR = 1A, IRR = 0.25 A, TA = 100ºC) (I F = 10 A, dIF/dt = 100A/us, TA = 25ºC) (I F = 10 A, dIF/dt = 100A/us, TA = 100ºC) trr1 trr2 trr3 IRM3 ta/tb trr4 IRM4 ta/tb 25 70 35 2.7 1.83 80 3.6 1.0 35 - - - - - - - nsec nsec nsec A - nsec A - Case Outline: SMD1 PIN OUT: PIN 1: ANODE 1 PIN 2: CATHODE PIN 3: ANODE 2 |
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