Datenblatt-Suchmaschine für elektronische Bauteile |
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STD5NM50-1 Datenblatt(PDF) 1 Page - STMicroelectronics |
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STD5NM50-1 Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 10 page 1/10 September 2002 STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7 Ω - 7.5A DPAK/IPAK MDmesh™Power MOSFET (1) ISD ≤ 5A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. n TYPICAL RDS(on) = 0.7Ω n HIGH dv/dt AND AVALANCHE CAPABILITIES n 100% AVALANCHE TESTED n LOW INPUT CAPACITANCE AND GATE CHARGE n LOW GATE INPUT RESISTANCE n TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain pro- cess with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STD5NM50 STD5NM50-1 500V 500V <0.8 Ω <0.8 Ω 7.5 A 7.5 A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuous) at TC = 25°C 7.5 A ID Drain Current (continuous) at TC = 100°C 4.7 A IDM (l) Drain Current (pulsed) 30 A PTOT Total Dissipation at TC = 25°C 100 W Derating Factor 0.8 W/°C dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns Tstg Storage Temperature – 55 to 150 °C Tj Max. Operating Junction Temperature 1 3 DPAK TO-252 3 2 1 IPAK TO-251 (Add Suffix “-1”) INTERNAL SCHEMATIC DIAGRAM |
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