STGP10NB60SDFP datasheet(2/8 Pages) STMICROELECTRONICS

Teilenummer	STGP10NB60SDFP

Bauteilbeschribung	N-CHANNEL 10A - 600V - TO-220FP PowerMesh??IGBT

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STGP10NB60SDFP

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Break-down

Voltage

IC = 250 µA, VGE = 0,

600

V

VBR(CES)

Emitter Collector Break-down

Voltage

IC =1mA, VGE =0,

20

V

ICES

Collector cut-off Current

(VGE =0)

VCE = Max Rating ,Tj =25 °C

VCE = Max Rating ,Tj =125 °C

10

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =± 20V,VCE = 0

± 100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250µA

2.5

5

V

VCE(SAT)

Collector-Emitter Saturation

Voltage

VGE =15V, IC = 5 A, Tj= 25°C

VGE =15V, IC = 10 A, Tj= 25°C

VGE =15V, IC = 10 A, Tj= 125°C

1.15

1.35

1.25

1.8

V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE =25V , IC =10 A

5S

Cies

Coes

Cres

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VCE = 25V, f = 1 MHz, VGE =0

610

65

12

pF

Qg

Gate Charge

VCE = 400V, IC =10 A,

VGE =15V

33

nC

ICL

Latching Current

Vclamp= 480V, RG= 1kΩ,

Tj= 125°C

20

A

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