Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ389L Datenblatt(PDF) 5 Page - Hitachi Metals, Ltd |
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2SJ389L Datenblatt(HTML) 5 Page - Hitachi Metals, Ltd |
5 / 7 page Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time 1000 200 500 100 20 50 10 –0.1 –1 –10 –100 –0.3 –3 –30 di / dt = 50 A / µs V = 0, Ta = 25 °C GS 0 –10 –20 –30 -40 –50 Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 300 100 Ciss Coss Crss V = 0 f = 1 MHz GS 0 –20 –40 –60 –80 0 Gate Charge Qg (nc) 0 –4 –8 –12 –16 –20 –100 Dynamic Input Characteristics 20 40 60 80 100 DS V GS V V = –10 V –25 V –50 V DD V = –50 V –25 V –10 V DD D I = –10 A Drain Current I (A) D Switching Characteristics 1000 200 500 100 20 50 10 –0.1 –0.2 –0.5 –1 –2 –5 –10 t f r t d(off) t d(on) t V = –10 V, V = –30 V PW = 5 µs, duty < 1 % GS DD 2SJ389 L , 2SJ389 S |
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