Datenblatt-Suchmaschine für elektronische Bauteile |
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TDE1747FP Datenblatt(PDF) 4 Page - STMicroelectronics |
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TDE1747FP Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics TDE1747 4/17 2 Electrical characteristics TJ = −25 to +85°C, V CC = 8 to 45 V, unless otherwise specified (note 1) Table 3. Electrical characteristics Symbol Parameter Min Typ Max Unit VIO Input offset voltage(1)(2) 1. For operating at high temperature, the TDE1747, must be derated based on a +150°C maximum junction temperature and junction-ambient thermal resistance of 120°C/W for DIP-8 and 100°C/W for the SO14. 2. The offset voltage given is the maximum value of input voltage required to drive the output voltage within 2V of the ground or the supply voltage. – 2 50 mV IIB Input bias current – 0.1 1.5 mA ICC Supply Current (VCC = +24V, IO = 0) High level Low level – – 4 2 6 4 mA mA VI(max) Common–mode input voltage range 2 – VCC–2 V ISC Short–circuit Current Limit (TA = 25°C, VCC = +24V) RSC= 1.5Ω RSC= ∞ – – 480 35 – 50 mA mA VCC–VO Output saturation voltage (output low) (VI +– V I - ≥ 50mV, R SC = 0, IO = 300mA, ) TJ = + 25°C TA = + 25°C – – 1.15 1.05 1.4 1.3 V V IOL Output leakage current (output high) (VO = 0, VCC = +24V, TA = + 25°C) – 0.01 10 µA |
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