STG4159BJR datasheet(7/18 Pages) STMICROELECTRONICS

Teilenummer	STG4159BJR

Bauteilbeschribung	Low voltage 0.3廓 max single SPDT switch with break-before-make feature and 10kV contact ESD protection

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STG4159

Electrical characteristics

7/18

Symbol

Parameter

Test conditions

Value

Unit

VCC (V)

VL (V)

TA = 25°C

-40 to 85°C

Min. Typ. Max.

Min. Max.

ICC

Quiescent

supply current

1.65-4.3 1.65 - 4.3

VSEL=VCC or

GND

-0.05

0.05

-0.2

0.2

µA

ISEL

SEL leakage

current

1.65-4.3 1.65 - 4.3

VSEL=4.3V or

GND

-0.1

0.1

-1

1

µA

1.

∆R

ON = RON(Max) - RON(Min)

2.

Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured

over the specified analog signal ranges.

Table 7.

AC electrical characteristics (CL = 35pF, RL = 50Ω, tr = tf ≤5ns)

Symbol

Parameter

Test conditions

Value

Unit

VCC (V)

VL (V)

TA = 25°C

-40 to 85°C

Min.

Typ.

Max.

Min.

Max.

tPLH,

tPHL

Propagation

delay

1.65-1.95

1.65-4.3

0.13

ns

2.3-2.7

0.15

3.0-3.3

0.16

3.6-4.3

0.16

tON

TURN-ON

time

1.65-1.95

1.65-4.3

VS = VCC

RL = 50Ω

CL = 30pF

95

123

160

ns

2.3-2.7

48

62

80

3-3.6

33

43

56

4.3

29

38

49

tOFF

TURN-OFF

time

1.65-1.95

1.65-4.3

VS = VCC

RL = 50Ω

CL = 30pF

12

15

20

ns

2.3-2.7

12

16

21

3-3.6

13

17

22

4.3

13

17

22

tD

Break-

before-make

time delay

1.65-1.95

1.65-4.3

CL = 35pF

RL = 50Ω

VS = VCC/2

10

42

ns

2.3-2.7

10

22

3-3.6

5

15

4.3

5

12

Q

Charge

injection

1.65-1.95

1.65-4.3

CL = 1nF

VGEN = 0V

83

pC

2.3-2.7

98

3.0-3.3

114

3.6-4.3

140

Table 6.

DC specifications

Ähnliche Beschreibung - STG4159BJR

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
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