Datenblatt-Suchmaschine für elektronische Bauteile |
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STP16NS25FP Datenblatt(PDF) 1 Page - STMicroelectronics |
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STP16NS25FP Datenblatt(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 May 2002 STP16NS25 STP16NS25FP N-CHANNEL 250V - 0.23 Ω - 16A TO-220 / TO-220FP MESH OVERLAY™ MOSFET (1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX (*) Limited only by maximum temperature allowed INTERNAL SCHEMATIC DIAGRAM s TYPICAL RDS(on) = 0.23 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s IDEAL FOR MONITOR’s B+ FUNCTION ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP16NS25 STP16NS25FP 250 V 250 V < 0.28 Ω < 0.28 Ω 16 A 16 A Symbol Parameter Value Unit STP16NS25 STP16NS25FP VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 250 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 16 16(*) A ID Drain Current (continuos) at TC = 100°C 11 11(*) A IDM (l) Drain Current (pulsed) 64 64(*) A PTOT Total Dissipation at TC = 25°C 140 40 W Derating Factor 1 0.33 W/°C dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature TO-220 1 2 3 1 2 3 TO-220FP |
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